MPS650 MPS651

NPN

MPS750 MPS751

PNP

COMPLEMENTARY

SILICON TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR MPS650, MPS750

series devices are complementary silicon transistors

designed for general purpose amplifier and switching

applications requiring high gain at high collector current.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TA=25°C unless otherwise noted)

MPS650

MPS651

SYMBOL

MPS750

MPS751

UNITS

Collector-Base Voltage

VCBO

60

80

V

Collector-Emitter Voltage

VCEO

40

60

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

2.0

A

Power Dissipation

PD

625

mW

Power Dissipation (TC=25°C)

PD

1.5

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

200

°C/W

Thermal Resistance

ΘJC

83.3

°C/W

MPS650

MPS651

ELECTRICAL CHARACTERISTICS: (TA=25°C)

MPS750

MPS751

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNITS

ICBO

VCB=60V

-

100

-

-

nA

ICBO

VCB=80V

-

-

-

100

nA

IEBO

VEB=4.0V

-

100

-

100

nA

BVCBO

IC=100μA

60

-

80

-

V

BVCEO

IC=10mA

40

-

60

-

V

BVEBO

IE=10μA

5.0

-

5.0

-

V

VCE(SAT)

IC=1.0A, IB=100mA

-

0.3

-

0.3

V

VCE(SAT)

IC=2.0A, IB=200mA

-

0.5

-

0.5

V

VBE(SAT)

IC=1.0A, IB=100mA

-

1.2

-

1.2

V

VBE(ON)

VCE=2.0V, IC=1.0A

-

1.0

-

1.0

V

hFE

VCE=2.0V, IC=50mA

75

-

75

-

hFE

VCE=2.0V, IC=500mA

75

-

75

-

hFE

VCE=2.0V, IC=1.0A

75

-

75

-

hFE

VCE=2.0V, IC=2.0A

40

-

40

-

fT

VCE=5.0V, IC=50mA, f=100MHz

75

-

75

-

MHz

TO-92 CASE

R1 (2-December 2014)

www.centr a lsemi.com