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DMP2002UPS датащи(PDF) 3 Page - Diodes Incorporated

номер детали DMP2002UPS
подробное описание детали  20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI짰
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMP2002UPS датащи(HTML) 3 Page - Diodes Incorporated

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POWERDI is a registered trademark of Diodes Incorporated.
DMP2002UPS
Document number: DS37192 Rev. 4 - 2
3 of 7
www.diodes.com
April 2015
© Diodes Incorporated
DMP2002UPS
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BVDSS
-20
—
—
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
IDSS
—
—
-1
µA
VDS = -20V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
±100
nA
VGS = 12V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
VGS(TH)
-0.5
—
-1.4
V
VDS = VGS, ID = -250µA
Static Drain-Source On-Resistance
RDS(ON)
—
1.3
1.9
m
VGS = -10V, ID = -25A
—
1.5
2.4
VGS = -4.5V, ID = -20A
—
2
3.8
VGS = -2.5V, ID = -15A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Ciss
—
12826
—
pF
VDS = -10V, VGS = 0V
f = 1MHz
Output Capacitance
Coss
—
2547
—
Reverse Transfer Capacitance
Crss
—
1924
—
Gate Resistance
RG
0.9
4.2
6.6
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = -10V)
Qg
—
476
585
nC
VDS = -10V, ID = -20A
Total Gate Charge (VGS = -4.5V)
Qg
—
228
282
Gate-Source Charge
Qgs
—
24.8
—
Gate-Drain Charge
Qgd
—
61.9
—
Turn-On Delay Time
tD(ON)
—
14.2
28
ns
VDD = -10V, VGEN = -4.5V,
RGEN = 1Ω, ID = -10A
Turn-On Rise Time
tR
—
35.4
70
Turn-Off Delay Time
tD(OFF)
—
361
578
Turn-Off Fall Time
tF
—
224
358
BODY DIODE CHARACTERISTICS
Continuous Body Diode Forward Current (Note 5 & 8)
IS
—
—
-60
A
TC = +25°C
Pulse Diode Forward Current
ISM
—
—
-100
Diode Forward Voltage
VSD
—
-0.58
-1.1
V
VGS = 0V, IS = -5A
Reverse Recovery Time (Note 7)
tRR
—
137
219
ns
IF = -10A, di/dt = 100A/µs
Reverse Recovery Charge (Note 7)
Qrr
—
221
332
nC
Reverse Recovery Fall Time (Note 7)
ta
—
39
—
ns
Reverse Recovery Raise Time (Note 7)
tb
—
98
—
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
8. Package limited.
0.0
5.0
10.0
15.0
20.0
25.0
30.0
0
0.5
1
1.5
2
2.5
3
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
V
GS = -1.2V
V
GS = -1.3V
V
GS = -1.4V
V
GS = -2.0V
V
GS = -1.5V
V
GS = -4.5V
0
5
10
15
20
25
30
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristic
V
DS = -5V
-55oC
25oC
85oC
125oC
150oC



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