Package Marking and Odering Information

Device Marking

Week Marking

Package

Packing

Quantity

RoHS Status

HFS8N65U

YWWX

TO-220F(A)

Tube

50

Pb Free

HFS8N65US

YWWX

TO-220F(B)

Tube

50

Pb Free

HFS8N65U

YWWXg

TO-220F(A)

Tube

50

Halogen Free

HFS8N65US

YWWXg

TO-220F(B)

Tube

50

Halogen Free

TO-220F(A) : Dual Gauge, TO-220F(B) : Single Gauge

Notes ;

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L=9.0mH, I

, Starting T

3. I

, V

DD

C

4. Pulse Test : Pulse Width

5. Essentially Independent of Operating Temperature

C unless otherwise specified

I

S

Continuous Source-Drain Diode Forward Current

--

--

7.5

A

I

SM

Pulsed Source-Drain Diode Forward Current

--

--

30

V

SD

Source-Drain Diode Forward Voltage

I

--

--

1.4

V

trr

Reverse Recovery Time

I

di

(Note 4)

--

350

--

Qrr

Reverse Recovery Charge

--

3.3

--

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

V

GS

Gate Threshold Voltage

V

2.5

--

4.5

V

R

DS(ON)

Static Drain-Source

On-Resistance

V

--

1.16

1.4

On Characteristics

BV

DSS

Drain-Source Breakdown Voltage

V

650

--

--

V

BV

DSS

/ T

J

Breakdown Voltage Temperature

Coefficient

I

, Referenced to 25

--

0.6

--

V/

I

DSS

Zero Gate Voltage Drain Current

V

--

--

1

V

--

--

10

I

GSS

Gate-Body Leakage Current

V

30 V, V

--

--

100

Off Characteristics

C

iss

Input Capacitance

V

f = 1.0 MHz

--

1200

1560

C

oss

Output Capacitance

--

100

130

C

rss

Reverse Transfer Capacitance

--

11.0

14.5

Dynamic Characteristics

t

d(on)

Turn-On Time

V

R

(Note 4,5)

--

35

70

t

r

Turn-On Rise Time

--

50

100

t

d(off)

Turn-Off Delay Time

--

120

240

t

f

Turn-Off Fall Time

--

50

100

Q

g

Total Gate Charge

V

V

(Note 4,5)

--

22.0

29.0

nC

Q

gs

Gate-Source Charge

--

6.5

--

nC

Q

gd

Gate-Drain Charge

--

6.5

--

nC

Switching Characteristics

Source-Drain Diode Maximum Ratings and Characteristics