Notes ;

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L=3mH, I

, Starting T

3. I

SD

DD

C

4. Pulse Test : Pulse Width

5. Essentially Independent of Operating Temperature

C unless otherwise specified

I

S

Continuous Source-Drain Diode Forward Current

--

--

7.2

A

I

SM

Pulsed Source-Drain Diode Forward Current

--

--

28.8

V

SD

Source-Drain Diode Forward Voltage

I

--

--

1.5

V

trr

Reverse Recovery Time

I

di

F

(Note 4)

--

140

--

Qrr

Reverse Recovery Charge

--

0.87

--

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

V

GS

Gate Threshold Voltage

V

2.0

--

4.0

V

R

DS(ON)

Static Drain-Source

On-Resistance

V

--

0.34

0.4

On Characteristics

BV

DSS

Drain-Source Breakdown Voltage

V

200

--

--

V

BV

DSS

/ T

J

Breakdown Voltage Temperature

Coefficient

I

--

0.2

--

I

DSS

Zero Gate Voltage Drain Current

V

--

--

1

V

--

--

10

I

GSSF

Gate-Body Leakage Current,

Forward

V

--

--

100

I

GSSR

Gate-Body Leakage Current,

Reverse

V

--

--

-100

Off Characteristics

C

iss

Input Capacitance

V

f = 1.0 MHz

--

550

720

C

oss

Output Capacitance

--

85

110

C

rss

Reverse Transfer Capacitance

--

22

29

Dynamic Characteristics

t

d(on)

Turn-On Time

V

R

--

11

25

t

r

Turn-On Rise Time

--

70

140

t

d(off)

Turn-Off Delay Time

--

60

120

t

f

Turn-Off Fall Time

--

65

130

Q

g

Total Gate Charge

V

V

--

22

30

Q

gs

Gate-Source Charge

--

4.0

--

Q

gd

Gate-Drain Charge

--

11

--

Switching Characteristics

Source-Drain Diode Maximum Ratings and Characteristics