PX511-2 datasheet(1/2 Pages) ROITHNER

номер детали	PX511-2

подробное описание детали	Photodiode Chip die

PDF	2 Pages

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производитель	ROITHNER [Roithner LaserTechnik GmbH]

домашняя страница	http://www.roithner-laser.com

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27.07.2011

PX511-2

1 of 1

PX511-2

TECHNICAL DATA

Photodiode Chip die

PX511-2 is a PIN PD of planar and front illuniated structure with P electrode on top and N

electrode on bottom.

Features

• InGaAs structure

• Spectral width: 1.0 – 1.65 µm

• Active Area: Ø 300µm

Absolute Maximum Ratings

Item

Symbol

Value

Unit

Optical Current

IPD

10

mA

Forward Current

IF

10

mA

Reverse Current

IR

10

mA

ESD threshold

>300

V

Operating Temperature

Topr

-40 … +85

°C

Storage Temperature

Tstg

-50 … +125

°C

Specifications (TC=22°C)

Item

Value

Unit

Wavelength Range

1.00 .. 1.68

µm

Active Area

300

µm

Responsivity (VR=5V, λ=1.31µm, φE=100µw)

>0.9

A/W

Capacitance (VR=5V, φE=0, f=1MHz)

5-6

pF

Dark Current (VR=5V, φE=0)

0.3 – 1.0

nA

Forward Voltage (IF=1mA)

0.6 – 0.8

V

Reverse Breakdown Voltage (ID=10µA, φE=0)

35 - 40

V

Rising time (VR=5V ,RL=50Ω)

≤ 4

ns

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