HCS65R660S datasheet(3/7 Pages) SEMIHOW

номер детали	HCS65R660S

подробное описание детали	Superior Avalanche Rugged Technology

PDF	7 Pages

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Typical Characteristics

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

DS = 325V

DS = 130V

DS = 520V

Note : I

D = 6.2A

G, Total Gate Charge [nC]

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

Bottom : 5.0 V

* Notes :

1. 300us Pulse Test

2. T

C = 25

DS, Drain-Source Voltage [V]

0.0

0.4

0.8

1.2

1.6

GS = 20V

GS = 10V

Note : T

J = 25

D, Drain Current [A]

-1

1000

2000

3000

4000

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

* Note ;

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

2468

0.1

-25

* Notes :

1. V

DS= 30V

2. 300us Pulse Test

GS, Gate-Source Voltage [V]

150

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.1

* Notes :

1. V

GS= 0V

2. 300us Pulse Test

SD, Source-Drain Voltage [V]

150

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