LED950-66-16100

TECHNICAL DATA

SUPER HIGH POWER INFRARED LED

Structure: 16 power LED chips, 4 x 4 parallel array

Peak Wavelength: typ. 950 nm

Optical Output Power: typ. 750 mW cw @ 2.0 A

Package: TO-66 with silicone + epoxy resin

Absolute Maximum Ratings (Tc = 25°C)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Power dissipation

20

W

DC forward current **)

2.2

A

Pulse forward current

*)

-

A

Reverse voltage

5

V

Operating lifetime

T

50.000

h

Operating case temperature

-30 .. +70

°C

Storage temperature

-60 .. +85

°C

*) Pulse width

≤ 10 µs, f ≤ 500 Hz

Optical-Electrical Characteristics (Tc = 25°C)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Radiant flux

θ

e (950 nm)

500

550

600

mW

Radiant flux

θ

e (950 nm)

700

750

800

mW

Luminous intensity

-

-

-

cd

Forward voltage

5.0

5.2

5.5

V

Reverse current

10

µA

Peak wavelength

λ

P

940

950

960

nm

Spectrum half width

∆λ

30

nm

Emission angle FWHM

θ

½

±60

°

IMPORTANT NOTE FOR SAFE OPERATION

This high power LED must be cooled! **) Use a heat sink with a thermal resistance

≤8K/W. Maximum uncooled

allowed operation current

≤80 mA. Do not view directly into the emitting area of the LED when in operation!

ROITHNER LASERTECHNIK GmbH

WIEDNER HAUPTSTRASSE 76, 1040 VIENNA, AUSTRIA

TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44

office@roithner-laser.com

www.roithner-laser.com

1 = anode

2 = cathode