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STUD3030NLS датащи(PDF) 2 Page - SamHop Microelectronics Corp.

номер детали STUD3030NLS
подробное описание детали  S uper high dense cell design for low R DS (ON).
PDF  9 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD3030NLS датащи(HTML) 2 Page - SamHop Microelectronics Corp.

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Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
BVDSS
=
VGS 0V, ID 250uA
=
30
V
Zero Gate Voltage Drain Current
IDSS
VDS 24V, VGS 0V
==
1
Gate-Body Leakage
IGSS
VGS
20V, VDS 0V
=
=
100 nA
ON CHAR ACTE R IS TICS
Gate Threshold Voltage
VGS(th)
VDS VGS,ID = 250uA
=
13
V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS 10V, ID 20A
VGS 4.5V, ID 12A
On-S tate Drain Current
ID(ON)
VDS = 10V, VGS =10V
A
S
Forward Transconductance
FS
g
VDS 10V, ID 20A
DYNAMIC CHAR ACTE R IS TICS
b
Input Capacitance
CISS
CRSS
COSS
Output Capacitance
R everse Transfer Capacitance
VDS =15V, VGS =0V
f=1.0MHZ
P
F
P
F
P
F
S WITCHING CHAR ACTE R IS TICS
b
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tD(ON)
tr
tD(OFF)
tf
VDD = 15V
ID =1 A
VGS = 10V
R GEN =6 ohm
ns
ns
ns
ns
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS =15V, ID = 20A
VGS =10V
nC
nC
nC
C
Fall Time
=
=
=
=
==
2
5
uA
mohm
mohm
VDS =15V, ID =20A,VGS =10V
nC
VDS =15V, ID =20A,VGS =4.5V
50
120
180
830
17
10
35
16
11
5
1.8
9
25
ohm
Rg
Gate resistance
VGS =0V, VDS = 0V, f=1.0MHZ
3
S T U/D3030NLS
ELEC TR IC AL C HAR AC TE R ISTIC S (TC=25 C unless otherwise noted)
1.7
13
18
25
18
a



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