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STUD1530PL датащи(PDF) 2 Page - SamHop Microelectronics Corp.

номер детали STUD1530PL
подробное описание детали  S uper high dense cell design for low R DS (ON).
PDF  8 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD1530PL датащи(HTML) 2 Page - SamHop Microelectronics Corp.

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ELEC TR IC AL C HAR AC TE R ISTIC S (TA 25 C unless otherwise noted)
=
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
BVDSS
=
VGS 0V, ID -250uA
=
-30
V
Zero Gate Voltage Drain Current
IDSS
VDS -24V, VGS 0V
==
-1
uA
Gate-Body Leakage
IGSS
VGS
20V, VDS 0V
=
=
100
nA
ON CHAR ACTE R IS TICS
b
Gate Threshold Voltage
VGS(th)
VDS VGS,ID = -250uA
=
-1
-1.5 -2.5
V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS -10V, ID -5.8A
VGS -4.5V, ID -2.0A
On-S tate Drain Current
ID(ON)
VDS =-5V, VGS =-10V
-20
A
S
Forward Transconductance
FS
g
VDS -15V, ID -5.8A
DYNAMIC CHAR ACTE R IS TICS
c
Input Capacitance
CISS
CRSS
COSS
Output Capacitance
R everse Transfer Capacitance
VDS =-15V, VGS =0V
f=1.0MHZ
P
F
P
F
P
F
S WITCHING CHAR ACTE R IS TICS
c
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tD(ON)
tr
tD(OFF)
tf
VD = -15V,
ID =-1A,
VGEN =- 10V,
R GEN =6 ohm
R L =15 ohm
ns
ns
ns
ns
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS =-15V, ID =-5.3A,
VGS =-10V
nC
nC
nC
C
Fall Time
=
=
=
=
==
5
2
m-ohm
m-ohm
45
60
nC
VDS =-15V,ID =-5.3A,VGS =-10V
VDS =-15V,ID =-5.3A,VGS =-4.5V
S T U/D1530P L
35
50
8
101
174
809
18.6
12.3
69.4
18.8
3.9
9.5
3.2
44



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