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STUD802S датащи(PDF) 4 Page - SamHop Microelectronics Corp.

номер детали STUD802S
подробное описание детали  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD802S датащи(HTML) 4 Page - SamHop Microelectronics Corp.

  STUD802S Datasheet HTML 1Page - SamHop Microelectronics Corp. STUD802S Datasheet HTML 2Page - SamHop Microelectronics Corp. STUD802S Datasheet HTML 3Page - SamHop Microelectronics Corp. STUD802S Datasheet HTML 4Page - SamHop Microelectronics Corp. STUD802S Datasheet HTML 5Page - SamHop Microelectronics Corp. STUD802S Datasheet HTML 6Page - SamHop Microelectronics Corp. STUD802S Datasheet HTML 7Page - SamHop Microelectronics Corp. STUD802S Datasheet HTML 8Page - SamHop Microelectronics Corp.  
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background image
10
1
60
50
40
30
20
0
246
8
10
0
ID=16A
10
60
25 C
75 C
125 C
125 C
0
0.25
0.50
0.75
1.00
1.25
25 C
75 C
0
5
10
15
20
25
30
3600
3000
2400
1800
1200
600
0
Cis s
Cos s
Crs s
100
10
1
1
610
60 100
60
600
300
600
V DS =40V , ID=16A
V G S =10V
Tr
TD(off)
Tf
TD(on)
4
VGS, Gate-Source Voltage (V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
VSD, Body Diode Forward Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
VDS, Drain-to Source Voltage (V)
Figure 9. Capacitance
Qg, Total Gate Charge (nC)
Figure 10. Gate Charge
Rg, Gate Resistance (
Ω)
Figure 11. Switching Characteristics
VDS, Gate-Source Voltage (V)
Figure 12. Maximum Safe
Operating Area
10
8
6
4
2
0
24
32
40
48
56
64
V DS =64V
ID=16A
16
8
0
100
10
0.1
1
700
1
10
100
100us
R
DS
(O
N)
Lim
it
1ms
10ms
DC
V GS =10V
S ingle P uls e
T c=25 C
STU/D802S
www.samhop.com.tw
Mar,31,2010
Ver 1.0



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