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STUD609S датащи(PDF) 3 Page - SamHop Microelectronics Corp.

номер детали STUD609S
подробное описание детали  Super high dense cell design for low RDS(ON).
PDF  7 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD609S датащи(HTML) 3 Page - SamHop Microelectronics Corp.

  STUD609S Datasheet HTML 1Page - SamHop Microelectronics Corp. STUD609S Datasheet HTML 2Page - SamHop Microelectronics Corp. STUD609S Datasheet HTML 3Page - SamHop Microelectronics Corp. STUD609S Datasheet HTML 4Page - SamHop Microelectronics Corp. STUD609S Datasheet HTML 5Page - SamHop Microelectronics Corp. STUD609S Datasheet HTML 6Page - SamHop Microelectronics Corp. STUD609S Datasheet HTML 7Page - SamHop Microelectronics Corp.  
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www.samhop.com.tw
Jun,22,2012
3
-VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
-VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
-ID, Drain Current(A)
Tj, Junction Temperature(° C)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
Tj, Junction Temperature(° C)
Figure 5. Gate Threshold Variation
with Temperature
Tj, Junction Temperature(° C)
Figure 6. Breakdown Voltage Variation
with Temperature
Tj( C )
Ver 1.1
25
20
15
10
5
0
0
1
6
5
4
3
2
Tj=125 C
-55 C
25 C
120
100
80
60
40
20
1
1
V GS =-10V
2.0
1.8
1.6
1.4
1.2
1.0
0
0
100
75
25
50
125
150
V GS =-10V
ID=-10A
V GS =-4.5V
ID=-8.5A
20
16
12
8
4
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0.4
0.2
1.6
1.4
1.2
1.0
0.8
0.6
125 150
100
75
50
25
0
-25
-50
V DS =V GS
ID=-250uA
1.15
1.10
1.05
1.00
0.95
0.90
0.85
125 150
100
75
50
25
0
-25
-50
ID=-250uA
4
8
12
16
20
140
V GS =-4.5V
STU/D609S
VGS = -10V
VGS = -5V
VGS = -3.5V
VGS = -4V
VGS = -4.5V



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