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STUD458S датащи(PDF) 2 Page - SamHop Microelectronics Corp.

номер детали STUD458S
подробное описание детали  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD458S датащи(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
40
V
1
IGSS
±100
nA
VGS(th)
V
6.2
gFS
S
CISS
1360
pF
COSS
240
pF
CRSS
200
pF
Qg
28
nC
42
64
41
tD(ON)
31
ns
tr
ns
tD(OFF)
ns
tf
ns
VDS=20V,VGS=0V
SWITCHING CHARACTERISTICS
VDD=20V
ID=1A
VGS=10V
RGEN=6ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
m ohm
VGS=10V , ID=24A
VDS=10V , ID=24A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
IDSS
uA
Gate Threshold Voltage
VDS=VGS ,ID=250uA
VDS=32V , VGS=0V
VGS=±20V,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
VGS=4.5V , ID=19A
8
8.6
11
m ohm
c
f=1.0MHz
c
STU/D458S
www.samhop.com.tw
Mar,02,2011
2
VSD
nC
Qgs
nC
Qgd
2.8
10
Gate-Drain Charge
Gate-Source Charge
Diode Forward Voltage
VDS=20V,ID=24A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=5A
0.77
1.3
V
Notes
nC
15.5
VDS=20V,ID=24A,VGS=10V
VDS=20V,ID=24A,VGS=4.5V
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13)
_
_
_
1
1.9
3
100
Ver 1.0



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