STUD417S datasheet(2/8 Pages) SAMHOP

номер детали	STUD417S

подробное описание детали	Super high dense cell design for low RDS(ON).

PDF	8 Pages

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производитель	SAMHOP [SamHop Microelectronics Corp.]

домашняя страница	http://www.samhop.com.tw

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2 / 8 page

Symbol

Min

Typ

Max

Units

BVDSS

-40

IGSS

±100

VGS(th)

-1.7

gFS

VSD

CISS

2620

COSS

360

CRSS

265

Qgs

325

Qgd

112

tD(ON)

6.2

tD(OFF)

Gate-Drain Charge

VDS=-20V,VGS=0V

SWITCHING CHARACTERISTICS

Gate-Source Charge

VDD=-20V

ID=-1.0A

VGS=-10V

RGEN=6ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

VDS=-20V,ID=-21.5A,VGS=-10V

Fall Time

Turn-On Delay Time

m ohm

VGS=-10V , ID=-21.5A

VDS=-10V , ID=-21.5A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

IDSS

Gate Threshold Voltage

VDS=VGS ,ID=-250uA

VDS=-32V , VGS=0V

VGS=±20V,VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V,ID=-250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

VGS=-4.5V , ID=-16.8A

m ohm

f=1.0MHz

VDS=-20V,ID=-21.5A,

VGS=-10V

DRAIN-SOURCE DIODE CHARACTERISTICS

VGS=0V,IS= -5A

-0.8

-1.3

Notes

a.Surface Mounted on FR4 Board,t < 10sec.

b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

d.Starting TJ=25°C,L=0.5mH,VDD = 20V .(See Figure13)

STU/D417S

www.samhop.com.tw

Aug,23,2010

VDS=-20V,ID=-21.5A,VGS=-4.5V

-2

-3

Ver 1.2

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