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LED720-66-60 датащи(PDF) 1 Page - Roithner LaserTechnik GmbH |
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LED720-66-60 датащи(HTML) 1 Page - Roithner LaserTechnik GmbH |
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1 / 3 page ![]() 25.04.2012 LED720-66-60 1 of 3 LED720-66-60 TECHNICAL DATA High Power LED Array, 60 chips AlGaAs LED720-66-60 is a wide viewing and extremely high output power illuminator assembled with a total of 60 high efficiency AlGaAs diode chips, mounted on a metal stem TO-66 with AIN ceramics and covered with double coated clear silicone and epoxy resin. These devices are designed for high current operation with proper heat sinking to improver thermal conductive efficiency. Specifications (Unit: mm) • Structure: AlGaAs, 60 LED chips • Peak Wavelength: 720 nm • Optical Output Power: 550 mW • Package: TO-66 stem with AIN • Lens: clear silicone and epoxy resin Absolute Maximum Ratings (TA=25°C) Item Symbol Value Unit Power Dissipation PD 8.0 W Forward Current IF 750 mA Pulse Forward Current * 1 IFP 3 A Reverse Voltage VR 50 V Junction Temperature TJ 100 °C Thermal Resistance * 2 RTH 2 K/W Operating Temperature Topr -30 … +80 °C Storage Temperature Tstg -30 … +110 °C Soldering Temperature * 3 Tsol 240 °C * 1 duty = 1%, pulse width = 1 µs * 2 junction – package, mounted on heat sink * 3 must be completed within 3 seconds at 260°C Electro-Optical Characteristics Item Symbol Condition Min. Typ. Max. Unit Peak Wavelength λ P IF = 600 mA - 720 - nm Half Width Δλ IF = 600 mA - 30 - nm Total Radiated Power PO IF = 600 mA - 550 - mW IFP = 3 A - 2750 - Radiant Intensity IE IF = 600 mA - 180 - mW/sr Forward Voltage VF IF = 600 mA - 9.5 - V Reverse Voltage VR IR = 10 µA 50 - - V Viewing Half Angle Θ 1/2 IF = 600 mA - ±60 - deg. Rise Time tR IF = 600 mA - 100 - ns Fall Time tF IF = 600 mA - 100 - ns Heat Sink is required , to keep the LED at ≤60 °C. Note: The above specifications are for reference purpose only and subjected to change without prior notice. |
Аналогичный номер детали - LED720-66-60 |
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Аналогичное описание - LED720-66-60 |
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