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STUD102S датащи(PDF) 2 Page - SamHop Microelectronics Corp.

номер детали STUD102S
подробное описание детали  Super high dense cell design for low RDS(ON).
PDF  10 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD102S датащи(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
100
V
1
IGSS
±100
nA
VGS(th)
V
gFS
S
CISS
170
pF
COSS
22
pF
CRSS
14
pF
6.6
10
14
2
tD(ON)
ns
tr
ns
tD(OFF)
ns
tf
ns
VDS=25V,VGS=0V
SWITCHING CHARACTERISTICS
VDD=50V
ID=1A
VGS=10V
RGEN=6ohm
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
VDS=10V , ID=3A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
Forward Transconductance
IDSS
uA
Gate Threshold Voltage
VDS=VGS ,ID=250uA
VDS=80V , VGS=0V
VGS=±20V,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
b
f=1.0MHz
b
www.samhop.com.tw
2
VSD
nC
Qgs
nC
Qgd
0.72
1.4
Gate-Drain Charge
Gate-Source Charge
Diode Forward Voltage
VDS=50V,ID=3A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=1A
0.81
1.3
V
1
2.1
3
6.4
Jun,09,2014
Ver 1.0
STU102S
STD102S
453
m ohm
VGS=10V , ID=3A
RDS(ON)
Drain-Source On-State Resistance
566
544
mohm
VGS=4.5V , ID=2.7A
734
Qg
nC
3.5
Total Gate Charge
VDS=50V,ID=3A,VGS=10V
Notes
a.Surface Mounted on FR4 Board of 1 inch2 ,1oz.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13)



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