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STUD35L01A датащи(PDF) 4 Page - SamHop Microelectronics Corp.

номер детали STUD35L01A
подробное описание детали  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD35L01A датащи(HTML) 4 Page - SamHop Microelectronics Corp.

  STUD35L01A Datasheet HTML 1Page - SamHop Microelectronics Corp. STUD35L01A Datasheet HTML 2Page - SamHop Microelectronics Corp. STUD35L01A Datasheet HTML 3Page - SamHop Microelectronics Corp. STUD35L01A Datasheet HTML 4Page - SamHop Microelectronics Corp. STUD35L01A Datasheet HTML 5Page - SamHop Microelectronics Corp. STUD35L01A Datasheet HTML 6Page - SamHop Microelectronics Corp. STUD35L01A Datasheet HTML 7Page - SamHop Microelectronics Corp. STUD35L01A Datasheet HTML 8Page - SamHop Microelectronics Corp.  
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STU/D35L01A
Ver 1.0
www.samhop.com.tw
May,27,2010
4
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
Rg, Gate Resistance(
Ω)
Figure 11. switching characteristics
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
0.1
1
10
100
100
10
1
0.3
R
DS
(ON
) L
im
it
VGS=10V
Single Pulse
TA=25 C
90
75
60
45
30
15
0
24
6
8
10
0
125 C
75 C
25 C
ID=17A
20.0
10.0
1.0
0
0.2
0.4
0.6
0.8
1.0
5.0
25 C
125 C
75 C
Ciss
Coss
Crss
4200
3500
2800
2100
1400
700
0
10
15
20
25
30
0
5
110
100
1
10
100
500
VDS=50V,ID=1A
VGS=10V
60
6
TD(on)
Tr
TD(off )
Tf
10
8
6
4
2
0
07
14
21
28
35
42
49
56
VDS=50V
ID=17A
DC
10m
s
1m
s
100
us
10u
s



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