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STUD35L01 датащи(PDF) 4 Page - SamHop Microelectronics Corp.

номер детали STUD35L01
подробное описание детали  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD35L01 датащи(HTML) 4 Page - SamHop Microelectronics Corp.

  STUD35L01 Datasheet HTML 1Page - SamHop Microelectronics Corp. STUD35L01 Datasheet HTML 2Page - SamHop Microelectronics Corp. STUD35L01 Datasheet HTML 3Page - SamHop Microelectronics Corp. STUD35L01 Datasheet HTML 4Page - SamHop Microelectronics Corp. STUD35L01 Datasheet HTML 5Page - SamHop Microelectronics Corp. STUD35L01 Datasheet HTML 6Page - SamHop Microelectronics Corp. STUD35L01 Datasheet HTML 7Page - SamHop Microelectronics Corp. STUD35L01 Datasheet HTML 8Page - SamHop Microelectronics Corp.  
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STU/D35L01
Ver 2.1
www.samhop.com.tw
Oct,29,2010
4
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
Rg, Gate Resistance(
Ω)
Figure 11. switching characteristics
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
VDS=50V,ID=1A
VGS=10V
120
100
80
60
40
20
0
10
0
125 C
75 C
25 C
ID=15A
10
1
60
3000
2500
2000
1500
1000
500
0
10
15
20
25
30
0
5
0.1
1
10
100
100
10
1
0.3
R
DS
(O
N)
Li
m
it
VGS=10V
Single Pulse
TC=25 C
DC
10
m
s
1m
s
100u
s
10u
s
10
8
6
4
2
0
05
10
15
20
25
30
35
40
8
6
4
2
Cis s
Crs s
Cos s
V DS =50V
ID=15A
TD(on)
10
1100
1
10
100
Tr
TD(off)
Tf
01.25
1.00
0.75
0.50
0.25
125 C
75 C
25 C



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