D40C7

NPN SILICON

DARLINGTON POWER

TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR D40C7 type is an

NPN silicon Darlington power transistor designed for

general purpose amplifier applications where high gain

is required.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TC=25°C)

SYMBOL

UNITS

Collector-Emitter Voltage

VCES

50

V

Collector-Emitter Voltage

VCEO

50

V

Emitter-Base Voltage

VEBO

13

V

Continuous Collector Current

IC

0.5

A

Peak Collector Current

ICM

1.0

A

Power Dissipation

PD

6.25

W

Operating and Storage Junction Temperature

TJ, Tstg

-55 to +150

°C

Thermal Resistance

ΘJC

20

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

ICES

VCE=50V

500

nA

ICBO

VCE=50V, TC=150°C

20

μA

IEBO

VEB=13V

100

nA

BVCEO

lC=10mA

50

V

VCE(SAT)

lC=500mA, IB=0.5mA

1.5

V

VBE(SAT)

lC=500mA, IB=0.5mA

2.0

V

hFE

VCE=5.0V, IC=200mA

10K

70K

fT

VCE=5.0V, lC=20mA

80

MHz

Ccb

VCB=10V, f=1.0MHz

10

pF

ton

lC=1.0A, IB1=1.0mA

120

ns

toff

lC=1.0A, IB1=IB2=1.0mA

1200

ns

TO-202 CASE

R2 (23-January 2012)

www.centr a lsemi.com