STT3418 datasheet(1/7 Pages) SAMHOP

номер детали	STT3418

подробное описание детали	Super high dense cell design for low RDS(ON).

PDF	7 Pages

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производитель	SAMHOP [SamHop Microelectronics Corp.]

домашняя страница	http://www.samhop.com.tw

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1 / 7 page

S mHop Microelectronics C orp.

a

STT3418

Symbol

VDS

VGS

IDM

A

ID

Units

Parameter

30

V

±20

Gate-Source Voltage

Drain-Source Voltage

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (m

Ω) Max

30V

5A

63

@

VGS=4.5V

39

@

VGS=10V

FEATURES

Super high dense cell design for low RDS(ON).

Rugged and reliable.

Surface Mount Package.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)

Limit

Drain Current-Continuous

-Pulsed

b

A

Ver 1.0

www.samhop.com.tw

Nov,22,2012

1

Details are subject to change without notice.

W

PD

°C

-55 to 150

TA=25°C

Maximum Power Dissipation

Operating Junction and Storage

Temperature Range

TJ, TSTG

TA=70°C

A

EAS

mJ

Single Pulse Avalanche Energy

d

TA=70°C

W

a

12

5

20

3

Green

Product

4

1.9

G

D

S

42

°C/W

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

R JA

a

TA=25°C

G

S

STT SERIES

SOT-223

D

Аналогичный номер детали - STT3418

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Аналогичный номер детали - STT3418

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