MV409 datasheet(1/2 Pages) LRC

номер детали	MV409

подробное описание детали	Silicon Tuning Diode

PDF	2 Pages

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производитель	LRC [Leshan Radio Company]

домашняя страница	http://www.lrc.cn/

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LESHAN RADIO COMPANY, LTD.

1

3

2

CASE

318–08, STYLE 8

SOT– 23 (TO–236AB)

MMBV409LT1

MV409

These devices are designed forgeneral frequency control and tuning applications.

They provide solid- state reliability in replacement of mechanical tuning methods.

•

High Q with Guaranteed Minimum Values at VHF Frequencies

• Controlled and Uniform Tuning Ratio

• Available in Surface Mount Package

Silicon Tuning Diode

3

CATHODE

1

ANODE

VOLTAGE VARIABLE

CAPACITANCE DIODES

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage

(IR = 10 µAdc)

V(BR)R

20

—

Vdc

Reverse Voltage Leakage Current

(VR = 15 Vdc)

IR

—

0.1

µAdc

Diode Capacitance Temperature Coefficient

(VR = 3.0 Vdc, f = 1.0 MHz)

TCC

—

300

—

ppm/

°C

Ct, Diode Capacitance

VR = 3.0 Vdc, f = 1.0 MHz

pF

Q, Figure of Merit

VR = 3.0 Vdc

f = 50 MHz

CR, Capacitance Ratio

C3/C8

f = 1.0 MHz(1)

Device

Min

Nom

Max

Min

Max

MMBV409LT1, MV409

26

29

32

200

1.5

1.9

1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 Vdc.

MAXIMUM RATINGS

Rating

Symbol

MBV409

MMBV409LT1

Unit

Reverse Voltage

VR

20

Vdc

Forward Current

IF

200

mAdc

Forward Power Dissipation

@ TA = 25°C

Derate above 25

°C

PD

280

2.8

225

1.8

mW

mW/

°C

Junction Temperature

TJ

+125

°C

Storage Temperature Range

Tstg

–55 to +150

°C

DEVICE MARKING

MMBV409LT1 = X5, MV409 = MV409

200

20

Аналогичный номер детали - MV409

производитель	номер детали	датащи	подробное описание детали
E-Tech Electronics LTD	MV409	103Kb / 2P	Silicon Tuning Diode

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