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STS8207 датащи(PDF) 2 Page - SamHop Microelectronics Corp.

номер детали STS8207
подробное описание детали  Super high dense cell design for low RDS(ON).
PDF  7 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STS8207 датащи(HTML) 2 Page - SamHop Microelectronics Corp.

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ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
STS8207
Ver 1.0
www.samhop.com.tw
May,07,2012
2
Symbol
Min
Typ
Max
Units
BVDSS
20
V
1
IGSS
±10
uA
VGS(th)
0.5
V
RDS(ON)
Drain-Source On-State Resistance
IDSS
uA
Gate Threshold Voltage
VDS=VGS ,ID=1mA
VDS=16V , VGS=0V
VGS=±12V,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V,ID=250uA
ON CHARACTERISTICS
0.9
1.5
gFS
12
S
VSD
CISS
240
pF
COSS
120
pF
CRSS
57
pF
Qg
30
nC
92
nC
Qgs
240
nC
Qgd
145
tD(ON)
6.4
ns
tr
1.3
ns
tD(OFF)
3.7
ns
tf
ns
Gate-Drain Charge
VDS=10V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=16V
ID=2.25A
VGS=4V
RGEN= 6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
VDS=5V,ID=2.25A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
Forward Transconductance
Diode Forward Voltage
Reverse Transfer Capacitance
VGS=2.5V , ID=2.25A
m ohm
c
f=1.0MHz
c
VDS=16V,ID=4.5A,
VGS=4V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=2A
0.83
1.2
V
Notes
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.
c.Guaranteed by design, not subject to production testing.
_
_
_
36
49
VGS=3.1V , ID=2.25A
m ohm
30
40
m ohm
VGS=4.0V , ID=2.25A
26
34
m ohm
VGS=3.7V , ID=2.25A
27
36
27
23
21
22



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