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STS8202 датащи(PDF) 2 Page - SamHop Microelectronics Corp.

номер детали STS8202
подробное описание детали  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STS8202 датащи(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
20
V
1
IGSS
±10
uA
VGS(th)
0.5
V
m ohm
VGS=4.5V , ID=2.5A
RDS(ON)
Drain-Source On-State Resistance
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=1mA
VDS=16V , VGS=0V
VGS= ±12V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
ON CHARACTERISTICS
STS8202
Ver 1.1
0.8
1.5
gFS
15
S
VSD
CISS
240
pF
COSS
120
pF
CRSS
57
pF
Qg
30
nC
92
nC
Qgs
240
nC
Qgd
145
tD(ON)
6.4
ns
tr
1.3
ns
tD(OFF)
3.7
ns
tf
ns
Gate-Drain Charge
VDS=10V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=16V
ID=2.5A
VGS=4.5V
RGEN= 6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
VDS=5V , ID=2.5A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
Forward Transconductance
Diode Forward Voltage
Reverse Transfer Capacitance
VGS=2.5V , ID=2.5A
m ohm
c
f=1.0MHz
c
VDS=16V,ID=5A,
VGS=4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=2A
0.83
1.2
V
Notes
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.
c.Guaranteed by design, not subject to production testing.
_
_
www.samhop.com.tw
Jun,18,2014
2
_
22.0
27.0
29.0
38.0
VGS=3.1V , ID=2.5A
m ohm
27.0
33.0
m ohm
VGS=4.0V , ID=2.5A
23.0
28.0
m ohm
VGS=3.7V , ID=2.5A
25.0
30.0
18.5
21.0
20.0
19.0
19.5



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