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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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CUN6AF1B датащи(PDF) 5 Page - Roithner LaserTechnik GmbH |
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CUN6AF1B датащи(HTML) 5 Page - Roithner LaserTechnik GmbH |
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5 / 19 page  서식Rev: 01 www.seoulviosys.com www.seoulviosys.com 5 Characteristics of CUN6AF1B 1-1 Electro-Optical characteristics at 500mA 1-2 Absolute Maximum Ratings Notes : 1. Peak Wavelength Measurement tolerance : ±3nm 2. Radiant Flux Measurement tolerance : ± 10% 3. Φe is the Total Radiant Flux as measured with an integrated sphere. 4. Forward Voltage Measurement tolerance : ±3% 5. RθJ-s is the thermal resistance between chip junction to PCB board bottom. (Ta=25℃, RH=30%) Parameter Symbol Value Unit Peak wavelength [1] λp 365 nm Radiant Flux[2] Φe[3] 690 mW Forward Voltage [4] VF 3.8 V Spectrum Half Width Δ λ 9 nm View Angle 2Θ1/2 110 deg. Thermal resistance RθJ-b[5] 5.6 ºC /W Parameter Symbol Value Unit Forward Current IF 700 mA Junction Temperature Tj 125 ºC Operating Temperature Topr -10 ~ +85 ºC Storage Temperature Tstg -40 ~ +100 ºC |
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