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STM6967 датащи(PDF) 2 Page - SamHop Microelectronics Corp.

номер детали STM6967
подробное описание детали  Super high dense cell design for low RDS(ON).
PDF  7 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STM6967 датащи(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
-60
V
-1
IGSS
±10
uA
VGS(th)
-2.0
V
69
gFS
15
S
VSD
CISS
1110
pF
COSS
79
pF
CRSS
56
pF
Qg
23
nC
19
nC
Qgs
71
nC
Qgd
37
tD(ON)
11.5
ns
tr
2.9
ns
tD(OFF)
6.2
ns
tf
ns
Gate-Drain Charge
VDS=-15V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=-15V
ID=-1A
VGS=-10V
RGEN= 6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
m ohm
VGS=-10V , ID=-4A
VDS=-5V , ID=-4A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=-250uA
VDS=-48V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
-4.0
VGS=-4.5V , ID=-3.3A
93
m ohm
c
f=1.0MHz
c
VDS=-15V,ID=-4A,
VGS=-10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=-1A
-0.79
-1.2
V
Notes
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13)
_
_
STM6967
Ver 1.0
www.samhop.com.tw
Apr,28,2010
2
_
-2.4
86
125
nC
24
VDS=-15V,ID=-4A,VGS=-10V
VDS=-15V,ID=-4A,VGS=-4.5V



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