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STG8205 датащи(PDF) 2 Page - SamHop Microelectronics Corp.

номер детали STG8205
подробное описание детали  Super high dense cell design for low RDS(ON).
PDF  7 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STG8205 датащи(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
20
V
1
IGSS
±100
nA
VGS(th)
0.5
V
m ohm
VGS=4.5V , ID=6A
RDS(ON)
Drain-Source On-State Resistance
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=16V , VGS=0V
VGS= ±10V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
ON CHARACTERISTICS
STG8205
Ver 1.0
0.8
1.5
gFS
26
S
VSD
CISS
410
pF
COSS
135
pF
CRSS
114
pF
Qg
14
nC
37
nC
Qgs
19
nC
Qgd
28
tD(ON)
8.8
ns
tr
1.4
ns
tD(OFF)
4.2
ns
tf
ns
Gate-Drain Charge
VDS=10V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=10V
ID=1A
VGS=4.5V
RGEN=10 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
VDS=5V , ID=6A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
Forward Transconductance
Diode Forward Voltage
Reverse Transfer Capacitance
VGS=2.5V , ID=5.1A
m ohm
c
f=1.0MHz
c
VDS=10V,ID=6A,
VGS=4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=2.0A
0.815
1.2
V
Notes
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
_
_
www.samhop.com.tw
Sep,17,2009
2
_
IS
Maximum Continuous Drain-Source Diode Forward Current
2.0
A
b
21
26
26
35



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