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STF8209 датащи(PDF) 2 Page - SamHop Microelectronics Corp.

номер детали STF8209
подробное описание детали  Super high dense cell design for low RDS(ON).
PDF  6 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STF8209 датащи(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
20
V
1
IGSS
±10
uA
VGS(th)
0.5
V
m ohm
VGS=4.5V , ID=3.25A
RDS(ON)
Drain-Source On-State Resistance
IDSS
uA
Gate Threshold Voltage
VDS=VGS ,ID=1.0mA
VDS=18V , VGS=0V
VGS=±12V,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V,ID=250uA
ON CHARACTERISTICS
STF8209
Ver 2.2
0.95
1.5
gFS
18
S
CISS
320
pF
COSS
106
pF
CRSS
92
pF
Qg
13.5
nC
30
nC
Qgs
19
nC
Qgd
13.5
tD(ON)
7.2
ns
tr
1.4
ns
tD(OFF)
4
ns
tf
ns
Gate-Drain Charge
VDS=10V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=16V
ID=3.25A
VGS=4.0V
RGEN= 6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
VDS=5V , ID=3.25A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
Forward Transconductance
Reverse Transfer Capacitance
VGS=4.0V , ID=3.25A
m ohm
c
f=1.0MHz
c
VDS=16V,ID=6.5A,
VGS=4.0V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=6.5A
0.89
1.2
V
Notes
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.
c.Guaranteed by design, not subject to production testing.
_
_
www.samhop.com.tw
Apr,10,2012
2
_
19.0
22.0
19.5
22.5
VGS=3.7V , ID=3.25A
m ohm
VGS=2.5V , ID=3.25A
m ohm
28.0
33.5
16.0
16.5
22.0
VGS=3.1V , ID=3.25A
m ohm
23.0
27.5
19.0
20.5
23.5
17.5



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