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FMMT718 датащи(PDF) 4 Page - Diodes Incorporated

номер детали FMMT718
подробное описание детали  20V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FMMT718 датащи(HTML) 4 Page - Diodes Incorporated

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FMMT718
Document Number: DS31924 Rev. 4 - 2
4 of 7
www.diodes.com
October 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FMMT718
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
-20
-65
-
V
IC = -100µA
Collector-Emitter Breakdown Voltage (Note 10)
BVCEO
-20
-55
-
V
IC = -10mA
Emitter-Base Breakdown Voltage
BVEBO
-7
-8.8
-
V
IE = -100µA
Collector Cutoff Current
ICBO
-
-
-100
nA
VCB = -15V
Emitter Cutoff Current
IEBO
-
-
-100
nA
VEB = -4V
Collector Emitter Cutoff Current
ICES
-
-
-100
nA
VCE= -15V
Static Forward Current Transfer Ratio (Note 10)
hFE
300
475
-
-
IC = -10mA, VCE = -2V
300
450
-
IC = -100mA, VCE = -2V
150
230
-
IC = -2A, VCE = -2V
35
70
-
IC = -4A, VCE = -2V
15
30
-
IC = -6A, VCE = -2V
Collector-Emitter Saturation Voltage (Note 10)
VCE(sat)
-
-16
-40
mV
IC =- 0.1A, IB = -10mA
-
-130
-200
mV
IC = -1A, IB = -20mA
-
-145
-220
mV
IC = -1.5A, IB = -50mA
Base-Emitter Turn-On Voltage(Note 10)
VBE(on)
-
-0.81
-1.0
V
IC = -2A, VCE = -2V
Base-Emitter Saturation Voltage(Note 10)
VBE(sat)
-
-0.87
-1.0
V
IC = -1.5A, IB = -50mA
Output Capacitance
Cobo
-
34
43
pF
VCB = -10V, f = 1MHz
Transition Frequency
fT
150
180
-
MHz
VCE = -10V, IC = -50mA,
f = 100MHz
Turn-On Time
ton
-
68
-
ns
VCC = -10V, IC = -1A
IB1 = IB2 = -20mA
Turn-Off Time
toff
-
270
-
ns
Notes:
10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%



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