ZXTP722MA datasheet(4/7 Pages) DIODES

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ZXTP722MA

Document Number DS31885 Rev. 5 - 2

4 of 7

www.diodes.com

January 2011

A Product Line of

Diodes Incorporated

ZXTP722MA

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

-70

-150

IC = -100µA

Collector-Emitter Breakdown Voltage (Note 6)

BVCEO

-70

-125

IC = -10mA

Emitter-Base Breakdown Voltage

BVEBO

-7

-8.5

IE = -100µA

Collector Cutoff Current

ICBO

-100

VCB = -55V

Emitter Cutoff Current

IEBO

-100

nA

VEB = -6V

Collector Emitter Cutoff Current

ICES

-100

VCES = -55V

Static Forward Current Transfer Ratio (Note 6)

hFE

300

175

470

450

275

IC = -10mA, VCE = -5V

IC = -100mA, VCE = -5V

IC = -1A, VCE = -5V

IC = -1.5A, VCE = -5V

IC = -3A, VCE = -5V

Collector-Emitter Saturation Voltage (Note 6)

VCE(sat)

-35

-135

-140

-175

-50

-200

-220

-270

IC = -0.1A, IB = -10mA

IC = -0.5A, IB = -20mA

IC = -1A, IB = -100mA

IC = -1.5A, IB = -200mA

Base-Emitter Turn-On Voltage (Note 6)

VBE(on)

-0.78

-1.00

IC = -1.5A, VCE = -5V

Base-Emitter Saturation Voltage (Note 6)

VBE(sat)

-0.94

-1.05

IC = -1.5A, IB = -200mA

Output Capacitance

Cobo

VCB = -10V. f = 1MHz

Transition Frequency

150

180

MHz

VCE = -10V, IC = -50mA,

f = 100MHz

Turn-On Time

ton

VCC = -50V, IC = -1A

IB1 = IB2 = -50mA

Turn-Off Time

toff

700

Notes:

6. Measured under pulsed conditions. Pulse width

≤ 300 µs. Duty cycle ≤ 2%.

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