FMMT495TC datasheet(4/7 Pages) DIODES

номер детали	FMMT495TC

подробное описание детали	150V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23

PDF	7 Pages

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FMMT495

Document number: DS33096 Rev. 4 - 2

4 of 7

www.diodes.com

October 2012

FMMT495

A Product Line of

Diodes Incorporated

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

170

—

IC = 100µA

Collector-Emitter Breakdown Voltage (Note 9)

BVCEO

150

—

IC = 1mA

Emitter-Base Breakdown Voltage

BVEBO

—

IE = 100µA

Collector Cutoff Current

ICBO

—

100

VCB = 150V

Emitter Cutoff Current

IEBO

—

100

VEB = 5V

Collector Emitter Cutoff Current

ICES

—

100

VCE = 150V

Static Forward Current Transfer Ratio (Note 9)

hFE

100

—

IC = 1mA, VCE = 10V

100

—

300

IC = 250mA, VCE = 10V

—

IC = 500mA, VCE = 10V

—

IC = 1A, VCE = 10V

Collector-Emitter Saturation Voltage (Note 9)

VCE(sat)

—

0.2

IC = 250mA, IB = 25mA

—

0.3

IC = 500mA, IB = 50mA

Base-Emitter Turn-On Voltage(Note 9)

VBE(on)

—

1.0

IC = 500mA, VCE = 10V

Base-Emitter Saturation Voltage(Note 9)

VBE(sat)

—

1.0

IC = 500mA, IB = 50mA

Output Capacitance

Cobo

—

VCB = 10V, f = 1MHz

Transition Frequency

100

—

MHz

VCE = 10V, IC = 50mA,

f = 100MHz

Notes:

9. Measured under pulsed conditions. Pulse width

≤ 300µs. Duty cycle ≤ 2%.

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