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STBP4410 датащи(PDF) 2 Page - SamHop Microelectronics Corp.

номер детали STBP4410
подробное описание детали  Super high dense cell design for extremely low RDS(ON).
PDF  10 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STBP4410 датащи(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
4 Symbol
Min
Typ
Max
Units
BVDSS
100
V
1
IGSS
±100
nA
VGS(th)
2
V
7.0
gFS
74
S
VSD
CISS
3715
pF
COSS
515
pF
CRSS
315
pF
Qg
116
nC
147
nC
Qgs
113
nC
Qgd
37
tD(ON)
58
ns
tr
9.5
ns
tD(OFF)
26
ns
tf
ns
Gate-Drain Charge
VDS=25V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=50V
ID=1A
VGS=10V
RGEN=6ohm
Total Gate Charge
Rise Time
Turn-Off DelayTime
VDS=50V,ID=25A,VGS=10V
Fall Time
Turn-On DelayTime
m ohm
VGS=10V , ID=37.5A
VDS=10V , ID=37.5A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS ,ID=250uA
VDS=80V , VGS=0V
VGS=±20V,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body leakage current
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V,ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
4
9.0
b
f=1.0MHz
b
VDS=50V,ID=25A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS
VGS=0V,IS=10A
0.77
1.3
V
Notes
STB4410
STP4410
www.samhop.com.tw
Dec,26,2014
2
3
Ver 1.0
a.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13)
e.Mounted on FR4 Board of 1 inch2 ,2oz.



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