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STBP438S датащи(PDF) 2 Page - SamHop Microelectronics Corp.

номер детали STBP438S
подробное описание детали  Super high dense cell design for extremely low RDS(ON)
PDF  8 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STBP438S датащи(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
40
V
1
IGSS
±100
nA
VGS(th)
1
V
7
gFS
28.1
S
VSD
CISS
1360
pF
COSS
248.5
pF
CRSS
143
pF
Qg
24
nC
25
nC
Qgs
67
nC
Qgd
32
tD(ON)
26
ns
tr
2.8
ns
tD(OFF)
6
ns
tf
ns
Gate-Drain Charge
VDS=20V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=20V
ID=1A
VGS=10V
RGEN=6 ohm
Total Gate Charge
Rise Time
Turn-Off DelayTime
VDS=20V,ID=20A,VGS=10V
Fall Time
Turn-On DelayTime
m ohm
VGS=10V , ID=20A
VDS=10V , ID=20A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
A
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=32V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body leakage current
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
a
3
VGS=4.5V , ID=12A
9
8.5
10
m ohm
b
f=1.0MHz
b
VDS=20V,ID=20A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=2A
0.74
1.3
V
Notes
STB/P438S
www.samhop.com.tw
Feb,05,2009
2
IS
Maximum Continuous Drain-Source Diode Forward Current
2
A
1.6
nC
12.5
VDS=20V,ID=20A,VGS=4.5V
a.Pulse Test:Pulse Width < 300us, Duty Ctcle < 2%.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,VDD=40V,
=10V,L=0.5mH.(See Figure13)
_
_
VGS
Ver1.0



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