STB458D datasheet(3/11 Pages) SAMHOP

номер детали	STB458D

подробное описание детали	Dual Enhancement Mode Field Effect Transistor (N and P Channel)

PDF	11 Pages

Scroll/Zoom	100%

производитель	SAMHOP [SamHop Microelectronics Corp.]

домашняя страница	http://www.samhop.com.tw

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3 / 11 page

4 Symbol

Min

Typ

Max

Units

BVDSS

-40

-1

IGSS

±100

VGS(th)

-1

13.5

gFS

VSD

CISS

2480

COSS

350

CRSS

260

Qgs

320

Qgd

120

tD(ON)

tD(OFF)

Gate-Drain Charge

VDS=-20V,VGS=0V

SWITCHING CHARACTERISTICS

Gate-Source Charge

VDD=-20V

ID=-1A

VGS=-10V

RGEN=3 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

VDS=-20V,ID=-12A,VGS=-10V

Fall Time

Turn-On Delay Time

m ohm

VGS=-10V , ID=-12A

VDS=-10V , ID=-12A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

IDSS

Gate Threshold Voltage

VDS=VGS , ID=-250uA

VDS=-32V , VGS=0V

VGS= ±20V , VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

P-Channel ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

-3

VGS=-4.5V , ID=-10A

m ohm

f=1.0MHz

VDS=-20V,ID=-12A,

VGS=-10V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VGS=0V,IS=-5A

-0.8

-1.2

Notes

a.Surface Mounted on FR4 Board,t < 10sec.

b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

d.Starting TJ=25°C,L=0.5mH,VDD = 20V,VGS=10V.(See Figure13)

STB458D

www.samhop.com.tw

Apr,23,2010

VDS=-20V,ID=-12A,VGS=-4.5V

-1.6

Ver 1.0

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