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STB416D датащи(PDF) 2 Page - SamHop Microelectronics Corp.

номер детали STB416D
подробное описание детали  Dual Enhancement Mode Field Effect Transistor (N and P Channel)
PDF  11 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STB416D датащи(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
40
V
1
IGSS
±100
nA
VGS(th)
1
V
22
gFS
20
S
VSD
CISS
700
pF
COSS
78
pF
CRSS
60
pF
Qg
13.5
nC
12.2
nC
Qgs
17
nC
Qgd
19.5
tD(ON)
11.5
ns
tr
1.3
ns
tD(OFF)
3.2
ns
tf
ns
Gate-Drain Charge
VDS=20V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=20V
ID=1A
VGS=10V
RGEN=6 ohm
Total Gate Charge
Rise Time
Turn-Off DelayTime
VDS=20V,ID=9A,VGS=10V
Fall Time
Turn-On DelayTime
m ohm
VGS=10V , ID=9A
VDS=10V , ID=9A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
A
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=32V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body leakage current
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
3
VGS=4.5V , ID=7.5A
28
32
43
m ohm
c
f=1.0MHz
c
VDS=20V,ID=9A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=2A
0.8
1.3
V
STB416D
Ver 1.0
www.samhop.com.tw
May,11,2010
2
1.9
nC
5.7
VDS=20V,ID=9A,VGS=4.5V
N-Channel ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)



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