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SP8009 датащи(PDF) 2 Page - SamHop Microelectronics Corp.

номер детали SP8009
подробное описание детали  Super high dense cell design for low RDS(ON).
PDF  6 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

SP8009 датащи(HTML) 2 Page - SamHop Microelectronics Corp.

  SP8009 Datasheet HTML 1Page - SamHop Microelectronics Corp. SP8009 Datasheet HTML 2Page - SamHop Microelectronics Corp. SP8009 Datasheet HTML 3Page - SamHop Microelectronics Corp. SP8009 Datasheet HTML 4Page - SamHop Microelectronics Corp. SP8009 Datasheet HTML 5Page - SamHop Microelectronics Corp. SP8009 Datasheet HTML 6Page - SamHop Microelectronics Corp.  
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background image
Symbol
Min
Typ
Max
Units
BVDSS
30
V
10
IGSS
±100
nA
VGS(th)
V
6
CISS
1670
pF
COSS
382
pF
CRSS
333
pF
Qg
29
nC
35
68
17
tD(ON)
31
ns
tr
ns
tD(OFF)
ns
tf
ns
VDS=10V,VGS=0V
SWITCHING CHARACTERISTICS
VDD=15V
ID=12A
VGS=10V
RGEN= 4.7 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
m ohm
VGS=10V , ID=12A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=0.2mA
VDS=30V , VGS=0V
VGS= ±16V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=-20V , ID=10mA
Reverse Transfer Capacitance
ON CHARACTERISTICS
VGS=6V , ID=12A
7.2
7.2
11
m ohm
b
f=1.0MHz
b
SP8009
Ver 1.1
www.samhop.com.tw
Jul,18,2013
2
VSD
nC
Qgs
nC
Qgd
2.5
10
Gate-Drain Charge
Gate-Source Charge
Diode Forward Voltage
VDS=24V,ID=12A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=24A
0.86
1.3
V
Notes
VDS=24V,ID=12A,VGS=10V
a.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
b.Guaranteed by design, not subject to production testing.
_
_
11.5
3
VGS=0V , ID=10mA
V
BVDSX
10



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