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SP8008 датащи(PDF) 2 Page - SamHop Microelectronics Corp.

номер детали SP8008
подробное описание детали  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

SP8008 датащи(HTML) 2 Page - SamHop Microelectronics Corp.

  SP8008 Datasheet HTML 1Page - SamHop Microelectronics Corp. SP8008 Datasheet HTML 2Page - SamHop Microelectronics Corp. SP8008 Datasheet HTML 3Page - SamHop Microelectronics Corp. SP8008 Datasheet HTML 4Page - SamHop Microelectronics Corp. SP8008 Datasheet HTML 5Page - SamHop Microelectronics Corp. SP8008 Datasheet HTML 6Page - SamHop Microelectronics Corp. SP8008 Datasheet HTML 7Page - SamHop Microelectronics Corp. SP8008 Datasheet HTML 8Page - SamHop Microelectronics Corp.  
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background image
Symbol
Min
Typ
Max
Units
BVDSS
30
V
10
IGSS
±10
uA
VGS(th)
V
3.9
CISS
2600
pF
COSS
520
pF
CRSS
445
pF
Qg
50
nC
64
103
18
tD(ON)
47
ns
tr
ns
tD(OFF)
ns
tf
ns
VDS=10V,VGS=0V
SWITCHING CHARACTERISTICS
VDD=15V
ID=14A
VGS=10V
RGEN= 4.7 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
m ohm
VGS=10V , ID=14A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=0.2mA
VDS=30V , VGS=0V
VGS= ±12V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=-20V , ID=10mA
Reverse Transfer Capacitance
ON CHARACTERISTICS
VGS=4.5V , ID=14A
4.9
4.2
5.5
m ohm
b
f=1.0MHz
b
SP8008
Ver 1.0
www.samhop.com.tw
Aug,13,2013
2
VSD
nC
Qgs
nC
Qgd
8.6
5.5
Gate-Drain Charge
Gate-Source Charge
Diode Forward Voltage
VDS=24V,ID=28A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=28A
0.83
1.3
V
Notes
VDS=24V,ID=28A,VGS=10V
a.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=0.5mH,VDD = 20V.
_
_
0.5
0.8
1.5
VGS=0V , ID=250uA
V
BVDSX
10
VGS=2.5V , ID=14A
5.2
7.0
m ohm



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