LESHAN RADIO COMPANY, LTD.

M1–1/2

1

3

2

General Purpose Transistors

PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

–45

V

Collector–Base Voltage

–50

V

Emitter–Base Voltage

–5.0

V

Collector Current — Continuous

–500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

225

mW

Derate above 25°C

1.8

mW/°C

Thermal Resistance, Junction to Ambient

556

°C/W

Total Device Dissipation

300

mW

Derate above 25°C

2.4

mW/°C

Thermal Resistance, Junction to Ambient

417

°C/W

Junction and Storage Temperature

–55 to +150

°C

DEVICE MARKING

BC807–16LT1 = 5A; BC807–25LT1 = 5B; BC807–40LT1 = 5C

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

–45

—

—

V

Collector–Emitter Breakdown Voltage

µA)

–50

—

—

V

Emitter–Base Breakdown Voltage

µA)

–5.0

—

—

V

Collector Cutoff Current

—

—

–100

nA

—

—

–5.0

µA

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

BC807-16LT1

BC807-25LT1

BC807-40LT1

1

EMITTER

3

COLLECTOR

2

BASE

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)