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SDF02N20 датащи(PDF) 2 Page - SamHop Microelectronics Corp.

номер детали SDF02N20
подробное описание детали  Rugged and reliable
PDF  11 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

SDF02N20 датащи(HTML) 2 Page - SamHop Microelectronics Corp.

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www.samhop.com.tw
Sep,30,2013
2
Ver 1.0
4 Symbol
Min
Typ
Max
Units
BVDSS
200
V
1
IGSS
±100
nA
VGS(th)
2V
gFS
1.3
S
VSD
CISS
183
pF
COSS
30
pF
CRSS
6
pF
Qg
9.5
nC
10
nC
Qgs
15.4
nC
Qgd
5.2
tD(ON)
ns
tr
0.95
ns
tD(OFF)
0.92
ns
tf
ns
Gate-Drain Charge
VDS=25V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=100V
ID=1A
VGS=10V
RGEN= 6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=100V,ID=1A,VGS=10V
Fall Time
Turn-On Delay Time
ohm
VGS=10V , ID=1A
VDS=10V , ID=1A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=160V , VGS=0V
VGS= ±30V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
4
3.9
b
f=1.0MHz
b
VDS=100V,ID=1A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=1A
1.4
V
2.8
3.0
0.82
3
Notes
a.Drain current limited by maximum junction temperatrue.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure12)
SDP02N20
SDF02N20



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