MMBT3904FZ datasheet(4/7 Pages) DIODES

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MMBT3904FZ

Document number: DS37160 Rev. 1 - 2

4 of 7

www.diodes.com

October 2014

MMBT3904FZ

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

BVCBO

—

IC = 100µA, IE = 0

Collector-Emitter Breakdown Voltage (Note 9)

BVCEO

—

IC = 10.0mA, IB = 0

Emitter-Base Breakdown Voltage

BVEBO

6.0

—

IE = 100µA, IC = 0

Collector Cutoff Current

ICEX

—

VCE = 30V, VEB(OFF) = 3.0V

Base Cutoff Current

IBL

—

VCE = 30V, VEB(OFF) = 3.0V

ON CHARACTERISTICS (Note 9)

DC Current Gain

hFE

100

—

300

—

IC = 100µA, VCE = 1.0V

IC = 1.0mA, VCE = 1.0V

IC = 10mA, VCE = 1.0V

IC = 50mA, VCE = 1.0V

IC = 100mA, VCE = 1.0V

Collector-Emitter Saturation Voltage

VCE(sat)

—

0.20

0.30

IC = 10mA, IB = 1.0mA

IC = 50mA, IB = 5.0mA

Base-Emitter Saturation Voltage

VBE(sat)

0.65

—

0.85

0.95

IC = 10mA, IB = 1.0mA

IC = 50mA, IB = 5.0mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Cobo

—

4.0

VCB = 5.0V, f = 1.0MHz, IE = 0

Input Capacitance

Cibo

—

9.5

VEB = 0.5V, f = 1.0MHz, IC = 0

Current Gain-Bandwidth Product

300

—

MHz

VCE = 20V, IC = 10mA,

f = 100MHz

SWITCHING CHARACTERISTICS

Delay Time

—

VCC = 3.0V, IC = 10mA,

VBE(off) = - 0.5V, IB1 = 1.0mA

Rise Time

—

Storage Time

—

200

VCC = 3.0V, IC = 10mA,

IB1 = IB2 = 1.0mA

Fall Time

—

Note:

9. Measured under pulsed conditions. Pulse width

 300µs. Duty cycle  2%.

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