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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MMBT2222ALP4 датащи(PDF) 4 Page - Diodes Incorporated |
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MMBT2222ALP4 датащи(HTML) 4 Page - Diodes Incorporated |
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4 / 7 page  MMBT2222ALP4 Document number: DS35506 Rev. 3 - 2 4 of 7 www.diodes.com August 2012 © Diodes Incorporated MMBT2222ALP4 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage BVCBO 75 ⎯ ⎯ V IC = 100μA, IE = 0 Collector-Emitter Breakdown Voltage (Note 6) BVCEO 40 ⎯ ⎯ V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO 6 ⎯ ⎯ V IE = 100μA, IC = 0 Collector Cutoff Current ICEX ⎯ 10 nA VCE = 60V, VEB(off) = 3V Collector Cutoff Current ICBO ⎯ ⎯ 10 nA VCB = 60V, IE = 0 ⎯ ⎯ 10 μA VCB = 60V, IE = 0, TA = +125°C Emitter Cutoff Current IEBO ⎯ ⎯ 10 nA VEB = 5V, IC = 0 Base Cutoff Current IBL ⎯ ⎯ 20 nA VCE = 60V, VEB(off) = 3V ON CHARACTERISTICS (Note 6) DC Current Gain hFE 35 ⎯ ⎯ ⎯ VCE = 10V, IC = 0.1mA 50 ⎯ ⎯ ⎯ VCE = 10V, IC = 1mA 75 ⎯ ⎯ ⎯ VCE = 10V, IC = 10mA 35 ⎯ ⎯ ⎯ VCE = 10V, IC = 10mA, TA = -55°C 100 ⎯ 300 ⎯ VCE = 10V, IC = 150mA 50 ⎯ ⎯ ⎯ VCE = 1V, IC = 150mA 40 ⎯ ⎯ ⎯ VCE = 10V, IC = 500mA Collector-Emitter Saturation Voltage VCE(sat) ⎯ ⎯ ⎯ ⎯ 0.3 1.0 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Base-Emitter Saturation Voltage VBE(sat) 0.6 ⎯ 1.2 V IC = 150mA, IB = 15mA ⎯ ⎯ 2.0 IC = 500mA, IB = 50mA SMALL SIGNAL CHARACTERISTICS (Note 6) Output Capacitance Cobo ⎯ ⎯ 8 pF VCB = 10V, f = 1.0MHz, IE = 0 Input Capacitance Cibo 25 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Current Gain-Bandwidth Product fT 300 ⎯ ⎯ MHz VCE = 20V, IC = 20mA, f = 100MHz Noise Figure NF ⎯ ⎯ 4.0 dB VCE = 10V, IC = 100µA, RS = 1.0kΩ, f = 1.0kHz Input Impedance hie 0.25 ⎯ 1.25 k Ω IC = 10mA, VCE = 10V, f = 1.0kHz Voltage Feedback Ratio hre ⎯ ⎯ 4.0 X 10 −4 Small-Signal Current Gain hfe 75 ⎯ 375 ⎯ Output Admittance hoe 25 ⎯ 200 µS SWICHING CHARACTERISTICS (Note 6) Delay Time td ⎯ ⎯ 10 nS VCC = 30V, VBE(off) = -0.5V, IC = 150mA, IB1 = 15mA Rise Time tr ⎯ ⎯ 25 Storage Time ts ⎯ ⎯ 225 VCC = 30V, IC = 150mA, IB1 = IB2=15mA Fall Time tf ⎯ ⎯ 60 Notes: 6. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤2%. |
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