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LED780-PD010-40D52

v 1.1 19.09.2014

LED780-PD010-40D52 consists of a GaAlAs LED 780 nm and a Si-PD mounted onTO-18 stem

hermetically sealed with a glass flat can, and is designed to monitor reflected light through

detector for controlling its own output power.

Specifications

Product Name: LED Lamp with PD Monitor

Type No.: LED780-PD010-40D52

Chip material: GaAlAs , Si (PIN)

Peak wavelength: 780 nm

Package: Stem TO-18

Lens: Ø5 2.4 Flat Glass

Can: Metal Can (Gold Plate )

Absolute Maximum Ratings [Ta=25°C]

Device

Item

Symbol

Maximum Rated

Unit

LED

Power Dissipation

200

mW

LED

Forward Current

100

mA

LED

Pulse Forward Current

500

A

LED

Reverse Voltage

5

V

PD

Reverse Voltage

100

V

Operating Temperature

-20 ~ +85

°C

Storage Temperature

-30 ~ +100

°C

Soldering Temperature

260

°C

Pulse Forward Current condition: Duty = 1%, tw = 10 µs

Soldering condition: Soldering condition must be completed within 3 seconds at 250°C

Electro-Optical Charactaristics [Ta=25°C]

Item

Symbol

Condition

Min.

Typ.

Max.

Unit

Forward Voltage

IF=50mA

1.70

2.00

V

Reverse Current

VR=5V

10

uA

Total Radiated Power

IF=50mA

3.0

6.0

mW

Radiant Intensity

IF=50mA

2.5

5.0

mW/sr

Peak Wavelength

λ

P

IF=50mA

765

780

795

nm

Half Width

∆λ

IF=50mA

35

nm

Viewing Half Angle

φ

IF=50mA

±55

deg.

Rise Time

IF=50mA

60

ns

Fall Time

IF=50mA

40

ns

Output Current

VR=0V

250

500

uA

Dark Current

VR=10V

10

nA

Total Radiated Power is measured by Photodyne #500

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The above specifications are for reference purpose only and subjected to change without prior notice