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LF2301JC55 датащи(PDF) 16 Page - LOGIC Devices Incorporated

номер детали LF2301JC55
подробное описание детали  Image Resampling Sequencer
PDF  18 Pages
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производитель  LODEV [LOGIC Devices Incorporated]
домашняя страница  http://www.logicdevices.com
Logo LODEV - LOGIC Devices Incorporated

LF2301JC55 датащи(HTML) 16 Page - LOGIC Devices Incorporated

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DEVICES INCORPORATED
LF2301
Image Resampling Sequencer
2-16
08/16/2000–LDS.2301-H
Video Imaging Products
1. Maximum Ratings indicate stress
specifications only. Functional oper-
ation of these products at values beyond
those indicated in the Operating Condi-
tions table is not implied. Exposure to
maximum rating conditions for ex-
tended periods may affect reliability.
2. The products described by this spec-
ification include internal circuitry de-
signed to protect the chip from damag-
ing substrate injection currents and ac-
cumulations of static charge. Neverthe-
less, conventional precautions should
be observed during storage, handling,
and use of these circuits in order to
avoid exposure to excessive electrical
stress values.
3. Thisdeviceprovideshardclampingof
transient undershoot and overshoot. In-
put levels below ground or above VCC
will be clamped beginning at –0.6 V and
VCC
+ 0.6 V. The device can withstand
indefinite operation with inputs in the
range of –0.5 V to +7.0 V. Device opera-
tion will not be adversely affected, how-
ever, input current levels will be well in
excess of 100 mA.
4. Actual test conditions may vary from
those designated but operation is guar-
anteed as specified.
5. Supply current for a given applica-
tion can be accurately approximated by:
where
N = total number of device outputs
C = capacitive load per output
V = supply voltage
F = clock frequency
6. Tested with no output load at
15 MHz clock rate.
7. Tested with all inputs within 0.1 V of
VCC
or Ground, no load.
8. These parameters are guaranteed
but not 100% tested.
NCV F
4
2
NOTES
9. AC specifications are tested with
input transition times less than 3 ns,
output reference levels of 1.5 V (except
tDIS
test), and input levels of nominally
0 to 3.0 V. Output loading may be a
resistive divider which provides for
specified IOH and IOL at an output
voltage of VOH min and VOL max
respectively.
Alternatively, a diode
bridge with upper and lower current
sources of IOH and IOL respectively,
and a balancing voltage of 1.5 V may be
used. Parasitic capacitance is 30 pF
minimum, and may be distributed.
This device has high-speed outputs ca-
pable of large instantaneous current
pulses and fast turn-on/turn-off times.
As a result, care must be exercised in the
testing of this device. The following
measures are recommended:
a. A 0.1 µF ceramic capacitor should be
installed between VCC and Ground
leads as close to the Device Under Test
(DUT) as possible. Similar capacitors
should be installed between device VCC
and the tester common, and device
ground and tester common.
b. Ground and VCC supply planes
must be brought directly to the DUT
socket or contactor fingers.
c. Input voltages should be adjusted to
compensate for inductive ground and
VCC
noise to maintain required DUT in-
putlevelsrelativetotheDUTgroundpin.
10. Each parameter is shown as a mini-
mum or maximum value. Input require-
ments are specified from the point of
view of the external system driving the
chip. Setuptime,forexample,isspecified
as a minimum since the external system
must supply at least that much time to
meet the worst-case requirements of all
parts. Responses from the internal cir-
cuitryarespecifiedfromthepointofview
of the device. Output delay, for example,
is specified as a maximum since worst-
case operation of any device always pro-
vides data within that time.
11. For the tENA test, the transition is
measured to the 1.5 V crossing point
with datasheet loads. For the tDIS test,
the transition is measured to the
±200mV level from the measured
steady-state output voltage with
±10mA loads. The balancing volt-
age, VTH, is set at 3.5 V for Z-to-0
and 0-to-Z tests, and set at 0 V for Z-
to-1 and 1-to-Z tests.
12. These parameters are only tested at
the high temperature extreme, which is
the worst case for leakage current.
S1
IOH
IOL
VTH
CL
DUT
OE
0.2 V
tDIS
tENA
0.2 V
1.5 V
1.5 V
3.5V Vth
1
Z
0
Z
Z
1
Z
0
1.5 V
1.5 V
0V Vth
VOL*
VOH*
VOL*
VOH*
Measured VOL with IOH = –10mA and IOL = 10mA
Measured VOH with IOH = –10mA and IOL = 10mA
FIGURE B. THRESHOLD LEVELS
FIGURE A. OUTPUT LOADING CIRCUIT



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