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BC847CDLP датащи(PDF) 3 Page - Diodes Incorporated

номер детали BC847CDLP
подробное описание детали  45V DUAL NPN SMALL SIGNAL TRANSISTOR
PDF  6 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

BC847CDLP датащи(HTML) 3 Page - Diodes Incorporated

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BC847CDLP
Document number: DS30817 Rev. 7 - 2
3 of 6
www.diodes.com
May 2013
© Diodes Incorporated
BC847CDLP
Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic (Note 6)
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
50
V
IC = 100µA, IB = 0
Collector-Emitter Breakdown Voltage
BVCEO
45
V
IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage
BVEBO
6
V
IE = 100µA, IC = 0
DC Current Gain
hFE
420
650
800
VCE = 5.0V, IC = 2.0mA
Collector-Emitter Saturation Voltage
VCE(sat)
55
130
250
600
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Saturation Voltage
VBE(sat)
700
900
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Voltage
VBE(on)
580
660
700
770
mV
VCE = 5.0V, IC = 2.0mA
VCE = 5.0V, IC = 10mA
Collector-Cutoff Current
ICES
15
nA
VCE = 50V
Collector-Cutoff Current
ICBO
15
5
nA
µA
VCB = 30V
VCB = 30V, TA = +150°C
Gain Bandwidth Product
fT
100
MHz
VCE = 5.0V, IC = 10mA,
f = 100MHz
Collector-Base Capacitance
CCBO
2.0
pF
VCB = 10V, f = 1.0MHz
Note:
6. Measured under pulsed conditions. Pulse width
 300µs. Duty cycle  2%.
V , COLLECTOR-EMITTER VOLTAGE (V)
Figure 2 Typical Collector Current vs. Collector-Emitter Voltage
CE
0
0.05
0.10
0.15
0.20
0.25
01
2
34
56
I = 2mA
B
I = 4mA
B
I = 10mA
B
I = 6mA
B
I = 8mA
B
0
200
400
600
800
1,000
1,200
1,400
0.1
10
1100
I , COLLECTOR CURRENT (mA)
Figure 3 Typical DC Current Gain vs. Collector Current
C
V
= 5V
CE
T = -55°C
A
T = 85°C
A
T = 150°C
A
T = 25°C
A



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