TSM2301A datasheet(2/6 Pages) TSC

2 / 6 page

TSM2301A

20V P-Channel MOSFET

2/6

Version: B14

Electrical Specifications (TC=25

oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

(Note 3)

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

BVDSS

-20

Gate Threshold Voltage

VDS = VGS, ID = 250µA

VGS(th)

-0.6

-0.7

-1

Gate Body Leakage

VGS = ±12V, VDS = 0V

IGSS

±100

Zero Gate Voltage Drain Current

VDS = -20V, VGS = 0V

IDSS

1.0

µA

Drain-Source On-State Resistance

VGS = -4.5V, ID = -2.8A

RDS(on)

130

mΩ

VGS = -2.5V, ID = -2.0A

120

190

Diode Forward Voltage

IS = -1A, VGS = 0V

VSD

-0.7

-1.3

Dynamic

(Note 4,5)

Gate Resistance

VGS = VDS =0V, f=1MHz

7.5

Ω

Total Gate Charge

VDS = -6V, ID = -2.8A,

VGS = -4.5V

7.2

Gate-Source Charge

Qgs

2.2

Gate-Drain Charge

Qgd

1.2

Input Capacitance

VDS = -15V, VGS = 0V,

f = 1.0MHz

Ciss

480

Output Capacitance

Coss

460

Reverse Transfer Capacitance

Crss

Switching

(Note 4,5)

Turn-On Delay Time

VDD = -6V, RL = 6Ω,

VGEN = -4.5V,

RG = 6Ω

td(on)

Turn-On Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

Notes:

1. Pulse width limited by the Maximum junction temperature

2. Surface Mounted on a 1 in

2 pad of 2oz Cu, t≤10 sec.

3. Pulse test: PW ≤300µs, duty cycle ≤2%

4. For DESIGN AID ONLY, not subject to production testing.

5. Switching time is essentially independent of operating temperature.

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