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TSM600P03CS датащи(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM600P03CS датащи(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 5 page ![]() TSM600P03CS 30V P-Channel Power MOSFET 1/5 Version: A14 SOP-8 Key Parameter Performance Parameter Value Unit VDS -30 V RDS(on) (max) VGS = -10V 60 m Ω VGS = -4.5V 90 Qg 5.1 nC Ordering Information Part No. Package Packing TSM600P03CS RLG SOP-8 2.5kps / 13 ’’ Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Absolute Maximum Ratings (Tc=25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current Tc=25ºC ID -4.7 A Tc=100ºC -3 A Pulsed Drain Current (Note 1) IDM -18.8 A Power Dissipation @ TC = 25 oC PD 2.1 W Operating Junction Temperature TJ 150 ºC Storage Temperature Range TSTG -55 to +150 oC Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Ambient RӨJA 50 oC/W Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Block Diagram P-Channel MOSFET |
Аналогичный номер детали - TSM600P03CS |
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Аналогичное описание - TSM600P03CS |
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