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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TSM042N03CS датащи(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM042N03CS датащи(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 5 page  TSM042N03CS 30V N-Channel Power MOSFET 2/5 Version: A14 Electrical Specifications (TJ=25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 30 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 12A RDS(ON) -- 3.8 4.2 m Ω VGS = 4.5V, ID = 6A 5.2 6 Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 1.2 1.6 2.5 V Zero Gate Voltage Drain Current VDS = 30V, VGS = 0V IDSS -- -- 1 µA VDS = 24V, TJ = 125ºC -- -- 10 Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Forward Transconductance (Note 3) VDS = 10V, ID = 6A gfs -- 12 -- S Dynamic Total Gate Charge (Note 3,4) VDS = 15V, ID = 12A, VGS = 4.5V Qg -- 24 -- nC Gate-Source Charge (Note 3,4) Qgs -- 4.2 -- Gate-Drain Charge (Note 3,4) Qgd -- 13 -- Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Ciss -- 2200 -- pF Output Capacitance Coss -- 280 -- Reverse Transfer Capacitance Crss -- 177 -- Switching Turn-On Delay Time (Note 3,4) VDD = 15V, ID = 15A, VGS = 10V, RGEN =3.3Ω td(on) -- 12.6 -- ns Turn-On Rise Time (Note 3,4) tr -- 19.5 -- Turn-Off Delay Time (Note 3,4) td(off) -- 42.8 -- Turn-Off Fall Time (Note 3,4) tf -- 13.2 -- Source-Drain Diode Ratings and Characteristic Maximum Continuous Drain-Source Diode Forward Current Integral reverse diode in the MOSFET IS -- -- 30 A Maximum Pulse Drain-Source Diode Forward Current ISM -- -- 120 A Diode Forward Voltage VGS = 0V, IS = 1A VSD -- -- 1 V Note: 1. Pulse width limited by safe operating area 2. L=0.1mH, IAS =50A, VDD = 25V, RG = 25Ω, Starting TJ = 25ºC 3. Pulse test: pulse width ≤300µs, duty cycle ≤2% 4. Switching time is essentially independent of operating temperature. |
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