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LTC1709 датащи(PDF) 16 Page - Linear Technology |
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LTC1709 датащи(HTML) 16 Page - Linear Technology |
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16 / 28 page ![]() 16 LTC1709 Figure 5a. Secondary Output Loop with EXTVCC Connection Figure 5b. Capacitive Charge Pump for EXTVCC external voltage source is applied to the EXTVCC pin when the VIN supply is not present, a diode can be placed in series with the LTC1709’s VIN pin and a Schottky diode between the EXTVCC and the VIN pin, to prevent current from backfeeding VIN. Significant efficiency gains can be realized by powering INTVCC from the output, since the VIN current resulting from the driver and control currents will be scaled by the ratio: (Duty Factor)/(Efficiency). For 5V regulators this means connecting the EXTVCC pin directly to VOUT. How- ever, for 3.3V and other lower voltage regulators, addi- tional circuitry is required to derive INTVCC power from the output. The following list summarizes the four possible connec- tions for EXTVCC: 1. EXTVCC left open (or grounded). This will cause INTVCC to be powered from the internal 5V regulator resulting in a significant efficiency penalty at high input voltages. 2. EXTVCC connected directly to VOUT. This is the normal connection for a 5V regulator and provides the highest efficiency. 3. EXTVCC connected to an external supply. If an external supply is available in the 5V to 7V range, it may be used to power EXTVCC providing it is compatible with the MOSFET gate drive requirements. 4. EXTVCC connected to an output-derived boost network. For 3.3V and other low voltage regulators, efficiency gains can still be realized by connecting EXTVCC to an output- derived voltage which has been boosted to greater than 4.7V but less than 7V. This can be done with either the inductive boost winding as shown in Figure 5a or the capacitive charge pump shown in Figure 5b. The charge pump has the advantage of simple magnetics. Topside MOSFET Driver Supply (CB,DB) (Refer to Functional Diagram) External bootstrap capacitors CB1 and CB2 connected to the BOOST 1 and BOOST 2 pins supply the gate drive voltages for the topside MOSFETs. Capacitor CB in the Functional Diagram is charged though diode DB from INTVCC when the SW pin is low. When the topside MOSFET turns on, the driver places the CB voltage across the gate- source of the desired MOSFET. This enhances the MOSFET and turns on the topside switch. The switch node voltage, SW, rises to VIN and the BOOST pin rises to VIN + VINTVCC. The value of the boost capacitor CB needs to be 30 to 100 times that of the total input capacitance of the topside MOSFET(s). The reverse breakdown of DB must be greater than VIN(MAX). The final arbiter when defining the best gate drive ampli- tude level will be the input supply current. If a change is made that decreases input current, the efficiency has improved. If the input current does not change then the efficiency has not changed either. Output Voltage The LTC1709 has a true remote voltage sense capablity. The sensing connections should be returned from the load back to the differential amplifier’s inputs through a com- APPLICATIO S I FOR ATIO 1709 F05a VIN TG1 N-CH 1N4148 N-CH BG1 PGND LTC1709 SW1 EXTVCC OPTIONAL EXTVCC CONNECTION 5V < VSEC < 7V T1 RSENSE VSEC VOUT VIN + CIN + 1 µF + COUT 1709 F05b VIN TG1 N-CH N-CH BG1 PGND LTC1709 SW1 EXTVCC L1 RSENSE BAT85 BAT85 BAT85 0.22 µF VOUT VIN + CIN + + COUT VN2222LL |
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