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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TSM040N03CPROG датащи(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM040N03CPROG датащи(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 5 page  TSM040N03CP 30V N-Channel Power MOSFET 2/5 Version: A14 Electrical Specifications (TC=25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 30 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 24A RDS(ON) -- 3.1 4 m Ω VGS = 4.5V, ID = 12A -- 4.5 6 Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 1.2 1.6 2.5 V Zero Gate Voltage Drain Current VDS = 30V, VGS = 0V IDSS -- -- 1 µA VDS = 24V, TJ = 125ºC -- -- 10 Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Forward Transconductance VDS = 10V, ID = 10A gfs -- 15.5 -- S Dynamic Total Gate Charge (Note 3,4) VDS = 15V, ID = 24A, VGS = 4.5V Qg -- 24 -- nC Gate-Source Charge (Note 3,4) Qgs -- 4.2 -- Gate-Drain Charge (Note 3,4) Qgd -- 13 -- Input Capacitance VDS = 25V, VGS = 0V, f = 1MHz Ciss -- 2200 -- pF Output Capacitance Coss -- 280 -- Reverse Transfer Capacitance Crss -- 177 -- Gate Resistance VGS=0V, VDS=0V, f=1MHz Rg -- 2 -- Ω Switching Turn-On Delay Time (Note 3,4) VDD=15V , VGS=10V , RG=3.3, ID=-15A td(on) -- 12.6 -- ns Turn-On Rise Time (Note 3,4) tr -- 19.5 -- Turn-Off Delay Time (Note 3,4) td(off) -- 42.8 -- Turn-Off Fall Time (Note 3,4) tf -- 13.2 -- Source-Drain Diode Ratings and Characteristic Continuous Drain-Source Diode VG=VD=0V Force Current IS -- -- 90 A Pulse Drain-Source Diode ISM -- -- 360 A Diode-Source Forward Voltage VGS = 0V, IS = 1A VSD -- -- 1 V Note: 1. Repetitive Rating: Pulsed width limited by maximum junction temperature. 2. VDD=25V, VGS=10V, L=0.1mH, IAS=50A, RG=25, Starting TJ=25 oC 3. The data tested by pulsed, pulse width ≤300µs, duty cycle ≤2% 4. Essentially independent of operating temperature. |
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