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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TSM22P10 датащи(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM22P10 датащи(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 7 page  TSM22P10 -100V P-Channel Power MOSFET 2/7 Version: A14 Electrical Specifications (T C = 25°C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = -250µA BVDSS -100 -- -- V Drain-Source On-State Resistance VGS = -10V, ID = -20A RDS(ON) -- 115 140 m Ω VGS = -4.5V, ID = -10A -- 130 170 Gate Threshold Voltage VDS = VGS, ID = -250µA VGS(TH) -1 -- -3 V Zero Gate Voltage Drain Current VDS = -100V, VGS = 0V IDSS -- -- -1 µA VDS = -80V, TJ = 125°C -- -- -10 Gate Body Leakage VGS = ±25V, VDS = 0V IGSS -- -- ±100 nA Dynamic Total Gate Charge (Note 3,4) VDS = -50V, ID = -20A, VGS = -10V Qg -- 42 -- nC Gate-Source Charge (Note 3,4) Qgs -- 8 -- Gate-Drain Charge (Note 3,4) Qgd -- 5.6 -- Input Capacitance VDS = -30V, VGS = 0V, f = 1.0MHz Ciss -- 2250 -- pF Output Capacitance Coss -- 130 -- Reverse Transfer Capacitance Crss -- 90 -- Switching Turn-On Delay Time (Note 3,4) VDD = -30V, ID = -1A, VGS = -10V, RG =6Ω td(on) -- -- -- ns Turn-On Rise Time (Note 3,4) tr -- -- -- Turn-Off Delay Time (Note 3,4) td(off) -- -- -- Turn-Off Fall Time (Note 3,4) tf -- -- -- Source-Drain Diode Ratings and Characteristic Maximum Continuous Drain-Source Diode Forward Current Integral reverse diode in the MOSFET IS -- -- -22 A Maximum Pulse Drain-Source Diode Forward Current ISM -- -- -88 A Diode-Source Forward Voltage VGS = 0V, IS = -1A VSD -- -- -1.1 V Note: 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area 3. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2% 4. Switching time is essentially independent of operating temperature. |
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