TSM6N60CPROG datasheet(2/7 Pages) TSC

номер детали	TSM6N60CPROG

подробное описание детали	600V N-Channel Power MOSFET

PDF	7 Pages

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производитель	TSC [Taiwan Semiconductor Company, Ltd]

домашняя страница	http://www.taiwansemi.com

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TSM6N60

600V N-Channel Power MOSFET

2/8

Version: B14

Electrical Specifications (Tc = 25oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

BVDSS

600

Drain-Source On-State Resistance

VGS = 10V, ID = 3.0A

RDS(ON)

1.1

1.25

Gate Threshold Voltage

VDS = VGS, ID = 250µA

VGS(TH)

2.75

Zero Gate Voltage Drain Current

VDS = 600V, VGS = 0V

IDSS

µA

Gate Body Leakage

VGS = ±30V, VDS = 0V

IGSS

±100

Dynamic

(Note a)

Total Gate Charge

VDS = 480V, ID = 6A,

VGS = 10V

20.7

Gate-Source Charge

Qgs

5.1

Gate-Drain Charge

Qgd

5.4

Input Capacitance

VDS = 25V, VGS = 0V,

f = 1.0MHz

Ciss

1248

Output Capacitance

Coss

117

Reverse Transfer Capacitance

Crss

11.3

Switching

(Note a)

Turn-On Delay Time

VGS = 10V, ID = 6A,

VDD = 300V, RGEN =25Ω

td(on)

Turn-On Rise Time

7.6

Turn-Off Delay Time

td(off)

107

Turn-Off Fall Time

6.2

Source-Drain Diode Ratings and Characteristic

Source Current

6.0

Diode Forward Voltage

IS = 6.0A, VGS = 0V

VSD

0.86

1.5

Note: Pulse Width < 300µs, Duty Cycle < 2%.

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