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LTC1649CS датащи(PDF) 8 Page - Linear Technology |
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LTC1649CS датащи(HTML) 8 Page - Linear Technology |
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8 / 16 page ![]() 8 LTC1649 EXTERNAL COMPONENT SELECTION Power MOSFETs Two N-channel power MOSFETs are required for most LTC1649 circuits. These should be selected primarily by on-resistance considerations; thermal dissipation is often a secondary concern in high efficiency designs. The LTC1649 is designed to be used with 5V logic-level MOS- FETs; “standard” threshold MOSFETs with RDS(ON) speci- fied at 10V only will not provide satisfactory performance. MOSFET RDS(ON) should be chosen based on input and output voltage, allowable power dissipation and maxi- mum required output current. In a typical LTC1649 buck converter circuit operating in continuous mode, the aver- age inductor current is equal to the output load current. This current is always flowing through either Q1 or Q2 with the power dissipation split up according to the duty cycle: DC (Q1) = VOUT VIN DC (Q2) = 1 – VOUT VIN = (VIN – VOUT) VIN The RON required for a given conduction loss can now be calculated by rearranging the relation P = I2R: RDS(ON) (Q1) = = PMAX(Q1) DC(Q1)(IMAX2) VIN(PMAX)(Q1) VOUT(IMAX2) RDS(ON) (Q2) = = PMAX(Q2) DC(Q2)(IMAX2) VIN(PMAX)(Q2) (VIN – VOUT)(IMAX2) PMAX should be calculated based primarily on required efficiency. A typical high efficiency circuit designed for 3.3V in, 2.5V at 10A out might require no more than 3% efficiency loss at full load for each MOSFET. Assuming roughly 90% efficiency at this current level, this gives a PMAX value of (2.5V)(10A/0.9)(0.03) = 833mW per FET and a required RDSON of: RDS(ON) (Q1) = = 0.011 Ω (3.3V)(833mW) (2.5V)(10A2) RDS(ON) (Q2) = = 0.034 Ω (3.3V)(833mW) (3.3V – 2.5V)(10A2) Note that while the required RDS(ON) values suggest large MOSFETs, the dissipation numbers are less than a watt per device— large TO-220 packages and heat sinks are not necessarily required in high efficiency applications. Siliconix Si4410DY and International Rectifier IRF7801 are two small, surface mount devices with RON values of 0.03Ω or below with 5V of gate drive; both work well in LTC1649 circuits. A higher PMAX value will generally decrease MOSFET cost and circuit efficiency and increase MOSFET heat sink requirements. Inductor The inductor is often the largest component in an LTC1649 design and should be chosen carefully. Inductor value and type should be chosen based on output slew rate require- ments and expected peak current. Inductor value is prima- rily controlled by the required current slew rate. The maximum rate of rise of the current in the inductor is set by its value, the input-to-output voltage differential and the maximum duty cycle of the LTC1649. In a typical 3.3V to 2.5V application, the maximum rise time will be: 93% = (VIN – VOUT) L AMPS SECOND 0.744A µs I L where L is the inductor value in µH. A 2µH inductor would have a 0.37A/ µs rise time in this application, resulting in a 14 µs delay in responding to a 5A load current step. During this 14 µs, the difference between the inductor current and the output current must be made up by the output capaci- tor, causing a temporary droop at the output. To minimize this effect, the inductor value should usually be in the 1 µH to 5 µH range for most typical 3.3V to 2.xV LTC1649 circuits. Different combinations of input and output volt- APPLICATIONS INFORMATION |
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